Infineon F3L100R12W2H3_B11 IGBT Silicon Modules 1200 V, 100 A 3-level IGBT module
Manufacturer: Infineon Model: F3L100R12W2H3_B11 - Contact
See more: Equipment Calibration-Inspection & Repair Service
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Technology: Si
Unit Weight: 39 g
Configuration: 3-Phase Inverter
Pd - Power Dissipation: 375 W
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.55 V
Continuous Collector Current at 25 C: 50 A
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