Infineon F3L75R12W1H3_B27 IGBT Silicon Modules 1200 V, 75 A 3-level IGBT module
Manufacturer: Infineon Model: F3L75R12W1H3_B27 - Contact
See more: Equipment Calibration-Inspection & Repair Service
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Technology: Si
Unit Weight: 24 g
Configuration: 3-Phase Inverter
Pd - Power Dissipation: 275 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.45 V
Continuous Collector Current at 25 C: 45 A
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