JPT 808nm-30W-400μm Laser Diode
Manufacturer: JPT Model: 808nm-30W-400μm - Contact
See more: Equipment Calibration-Inspection & Repair Service
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Application
Solid-state laser pumping
Medical application
Material processing
Specification
Optical Parameters
Output Power: min 30W
Center Wavelength (nm): min 805; typical 808; max 811
Spectral Width(FWHM): typical 3 nm
Back Reflection Isolation Range (nm): min 1040; typical 1060; max 1200
Electrical Parameters
Conversion Efficiency (%): typical 45
Threshold Current (A): typical 1.8
Operating Current (A): typical 10
Operating Voltage (V): Max 8
Slope Efficiency (W/A): typical 3
Fiber Parameters
Core Diameter (μm): typical 400
Numerical Aperture (NA): typical 0.22
Fiber Length (m): typical 1.5
Fiber Connector: typical SMA905
Fiber Bend Radius (mm): min 80
Thermal Parameters
Package Operating Temperature (℃): min 15; max 40
Storage Temperature (℃): min -20; max 85
Wavelength Temperature Coefficient (nm/℃): typical 0.3
Lead Soldering Temperature (℃): typical 260
Lead Soldering Time (s): typical 10
JPT has different kinds of semiconductor laser components and high-power laser modules. Semiconductor laser can be widely used in pump source, industrial processing, mechanical vision, medical and many other fields. Based on the mature coupling technology solution, thermal control and packaging process, the product has the advantages of high power, high beam quality, high stability, etc., and the product wavelength covers 400nm~1000nm, which meets the special requirements of power, brightness, wavelength control, spot uniformity and so on.
- Quality Engagement
- Easy change and return
- Delivery Avaliable
- Favorable payment
