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onsemi FGHL50T65LQDTL4 IGBT Transistors IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 341 W

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.15 V

Continuous Collector Current at 25 C: 80 A

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  • Easy change and return
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  • Favorable payment

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