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onsemi FGY60T120SWD IGBT Transistors 1200V, 60A Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3 1200 V, 1.7 V, 60 A

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 635 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 105 A

Collector-Emitter Saturation Voltage: 2.25 V

Continuous Collector Current at 25 C: 105 A

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