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PANJIT PCDP0665G1_T0_00001 Schottky Silicon Carbide Diodes 650V SiC Schottky Barrier Diode

Technology: SiC

Unit Weight: 1.890 g

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 6 A

Ir - Reverse Current: 2 uA

Vf - Forward Voltage: 1.5 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 57.7 W

Ifsm - Forward Surge Current: 320 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 650 V

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