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Torex Semiconductor XP231N02013R-G MOSFETs N-CHANNEL 30V 0.2A

Fall Time: 8 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 180 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 350 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 700 mV

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