Transphorm TP65H480G4JSGB-TR GaN FETs GAN FET 650V 3.6A QFN5x6
Manufacturer: Transphorm Model: TP65H480G4JSGB-TR - Contact
See more: Equipment Calibration-Inspection & Repair Service
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Hanoi city: (024) 35.381.269
Danang city: (023) 63.747.711
Bac Ninh city: (0222) 730.39.68
Hai Phong city: (0225) 730.03.89
HCM city: (028) 38.119.636
Dong Nai: 0345.689.536
Fall Time: 10.6 ns
Rise Time: 2.4 ns
Technology: GaN
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 5 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 13.2 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 20.2 ns
Typical Turn-Off Delay Time: 31.2 ns
Id - Continuous Drain Current: 3.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 560 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 2.8 V
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