IXYS IXGR72N60B3H1 IGBTトランジスタ 中周波数帯 15kHz-40kHz ダイオード付き

Technology: Si

Unit Weight: 5 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 200 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 80 A