ROHM Semiconductor RGW00TS65HRC11 IGBTトランジスタ 高速スイッチングタイプ, 650V 50A, TO-247N, フィールドストップトレンチIGBT 自動車用

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 254 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.9 V

Continuous Collector Current at 25 C: 96 A