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Kioxia THGBMJG7C2LBAU8 eMMC 闪存驱动器 16GB 5.1 2D 15nm -40°C 至 105°C

Kioxia THGBMJG7C2LBAU8 eMMC 闪存驱动器 16GB 5.1 2D 15nm -40°C 至 105°C

GSI Technology GS8322Z18AB-250V NBT 1.8/2.5V 2M x 18 36M

GSI Technology GS8322Z18AB-250V NBT 1.8/2.5V 2M x 18 36M

GSI Technology GS8256436GB-250I 管道/流通 2.5/3.3V 8M x 36 288M

GSI Technology GS8256436GB-250I 管道/流通 2.5/3.3V 8M x 36 288M

Micron MT29F4G08ABAFAWP-IT:F TR NAND闪存SLC 4G 512MX8 TSOP

Micron MT29F4G08ABAFAWP-IT:F TR NAND闪存SLC 4G 512MX8 TSOP

Winbond W631GU8NB15I SDRAM - DDR3 1Gb DDR3L 1.35V S，x8，667MHz，工业温度

Winbond W631GU8NB15I SDRAM - DDR3 1Gb DDR3L 1.35V S，x8，667MHz，工业温度

GSI Technology GS8662D19BD-350 SigmaQuad-II+ B4 1.8 或 1.5V 4M x 18 72M

GSI Technology GS8662D19BD-350 SigmaQuad-II+ B4 1.8 或 1.5V 4M x 18 72M

SkyHigh Memory S34ML01G200BHI500 NAND闪存SLC,1Gb,3x,3V,x8,4bit,VBM63

SkyHigh Memory S34ML01G200BHI500 NAND闪存SLC,1Gb,3x,3V,x8,4bit,VBM63

Renesas Electronics 72V243L7-5PFGI FIFO 4Kx9/ 2Kx18 3.3V SUPERSYNC II

Renesas Electronics 72V243L7-5PFGI FIFO 4Kx9/ 2Kx18 3.3V SUPERSYNC II

Infineon CY7C1041G30-10ZSXIT SRAM 异步 S

Infineon CY7C1041G30-10ZSXIT SRAM 异步 S

Renesas Electronics 72V51456L7-5BB FIFO X36 16Q 2M-多队列

Renesas Electronics 72V51456L7-5BB FIFO X36 16Q 2M-多队列

GSI Technology GS8342QT19BGD-300I SigmaQuad-II+ B2 1.8 或 1.5V 2M x 18 36M

GSI Technology GS8342QT19BGD-300I SigmaQuad-II+ B2 1.8 或 1.5V 2M x 18 36M

GSI Technology GS8342D09BD-350M SigmaQuad-II B4

GSI Technology GS8342D09BD-350M SigmaQuad-II B4

Winbond W25R512NWEIQ TR NOR Flash RPMC spiFlash，3V，512M位

Winbond W25R512NWEIQ TR NOR Flash RPMC spiFlash，3V，512M位

Microchip Technology 25AA1024-I/P EEPROM 128kx8 - 1.8V

Microchip Technology 25AA1024-I/P EEPROM 128kx8 - 1.8V

GSI Technology GS881E32CGD-150V DCD 流水线/流通 1.8/2.5V 256K x 32 8M

GSI Technology GS881E32CGD-150V DCD 流水线/流通 1.8/2.5V 256K x 32 8M

ISSI IS25WX512M-OHLA3 NOR闪存 512Mb，八路闪存，1.8V，24球TFBGA，RoHS，默认八路DDR模式，IT，自动等级

ISSI IS25WX512M-OHLA3 NOR闪存 512Mb，八路闪存，1.8V，24球TFBGA，RoHS，默认八路DDR模式，IT，自动等级

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