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Analog Devices SSM2212RZ-R7 BJTs - Bipolar Transistors Low Noise,Matched Dual NPN Transistor

Width: 4 mm

Height: 1.5 mm

Length: 5 mm

Technology: Si

Unit Weight: 540 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Gain Bandwidth Product fT: 200 MHz

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 20 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

DC Collector/Base Gain hfe Min: 300 at 1 mA, 200 at 10 uA

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 50 mV

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