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IETLAB HRRS Series High Resistance Decade Box (100 Ω to 100 GΩ, 1kV)

  • Manufacturer: IET LAB
    Model: HRRS Series
    Guarantee: 12 month
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Manufacturer: IETLAB
Origin: USA

(Full specifications can be found on datasheet)

Resistance from 100 Ω to 100 GΩ
High-accuracy: up to .01%, 3 Accuracy Classes Available
Voltage up to 2000 V
Excellent TC: as low as 5 ppm/°C
Low voltage coefficient: as low as 0.2 ppm/V
High-performance solid silver-alloy switches
Rack mounting available

Detail

datasheet

manual

The High Resistance Resistance Substituter (HRRS Series) is an economical, high-performance, high-resistance decade box for all laboratory, test, and calibration needs. The High-resistance design is implemented with special resistors, switches, binding posts, and construction-design to allow high resistance performance without sacrificing other electrical properties. These instruments are useful wherever small currents and high resistances are required.

The HRRS Series employs state-of-the-art precision resistors of various types for high accuracy, high stability, and low temperature and voltage coefficients. The standard models offer a choice of one to seven decades. See the HRRS-5kV & 10kV Series that feature >10 kV and up to 10 TΩ for higher voltage or higher resistance applications.

The binding posts, for the HRRS high resistance decade boxes, are insulated with PCTFE (polychlorotrifluoroethylene) a high-resistance, non-moisture-absorbing material to ensure low leakage current.

With a resolution as low as 10 Ω and a maximum available resistance of over 100 GΩ, the HRRS Series may be used for exacting precision high-value resistance applications.

The HRRS series decade box complements the HARS series which provides resistance steps as low as 1 mΩ. The units may be rack-mounted to serve as components in measurement and control systems.

HRRS Basic Specifications

Resistance per step
Total decade resistance
Accuracy
Max voltage per step (V)
Maximum Voltage (V)
Temperature coefficient (ppm/C)
Voltage coefficient (ppm/V)
Stability (ppm/yr)
Resistor Type
Q
B
F
10 Ω 100 Ω ±(0.01%+2 mΩ) ±(0.03%+2 mΩ) ±(0.10%+2 mΩ) 2.5 25 15 0 10 Wirewound, non-inductive
100 Ω 1 kΩ ±(0.01%+2 mΩ) ±(0.03%+2 mΩ) ±(0.10%+2 mΩ) 8 80 5 0 10 Wirewound, non-inductive
1 kΩ 10 kΩ ±0.01% ±0.03% ±0.10% 23 230 5 0 10 Wirewound, non-inductive
10 kΩ 100 kΩ ±0.01% ±0.03% ±0.10% 70 700 5 0 10 Wirewound, non-inductive
100 kΩ 1 MΩ ±0.01% ±0.03% ±0.10% 230 2000 5 0 10 Wirewound, non-inductive
1 MΩ 10 MΩ ±0.01% ±0.03% ±0.10% 1000* 2000 15 0.2 25 Metal-oxide film
10 MΩ 100 MΩ ±0.03% ±0.10% ±1% 1000* 2000 15 <1 50 Metal-oxide film
100 MΩ 1 GΩ ±0.10% ±0.20% ±1% 1000* 2000 15 1 100 Metal-oxide film
1 GΩ 10 GΩ ±0.20% ±0.50% ±1% 1000* 2000 50 1 500 High-voltage film
10 GΩ 100 GΩ ±0.50% ±1% ±1% 1000* 2000 50 1 500 High-voltage film
100 GΩ 1 TΩ See HRRS-5kV Series for this model.
1 TΩ 10 TΩ

See HRRS-5kV Series for this model.


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