Infineon IGLT65R055D2ATMA1 GaN Power Transistor HV GAN DISCRETES
Manufacturer: Infineon Model: IGLT65R055D2ATMA1 - Contact
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Technology: GaN
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 6.6 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 104 W
Vgs - Gate-Source Voltage: - 10 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 66 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
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