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Nexperia PMPB16EPX MOSFETs 30 V, N-channel Trench MOSFET

Fall Time: 25 ns

Rise Time: 7 ns

Technology: Si

Unit Weight: 6.750 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 29 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 3 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 10.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 33 S

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V

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