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onsemi 2SD1816S-TL-E BJTs - Bipolar Transistors HF LOW-NOISE AMPLIFIER

Width: 6.5 mm

Height: 2.3 mm

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 150 mV

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