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PANJIT PJQ1906_R1_00201 MOSFETs 20V N-Channel Enhancement Mode MOSFET

Technology: Si

Unit Weight: 0.595 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 900 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 700 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Id - Continuous Drain Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.2 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V

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