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Qorvo QPD0020 GaN FETs DC-6 GHz, 3 W, 48V GaN RF Pwr Tr

Gain: 16.7 dB

Technology: GaN

Unit Weight: 1.430 g

Output Power: 34.7 W

Mounting Style: SMD/SMT

Development Kit: QPD0020EVB02

Transistor Type: HEMT

Moisture Sensitive: Yes

Maximum Drain Gate Voltage: 48 V

Maximum Operating Frequency: 6 GHz

Minimum Operating Frequency: 0 Hz

Vds - Drain-Source Breakdown Voltage: 48 V

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