Renesas Electronics RJE0609JPD-00#J3 MOSFETs Silicon P Channel MOS FET Series
Manufacturer: Renesas Electronics Model: RJE0609JPD-00#J3 - Contact
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Width: mm
Height: mm
Length: mm
Fall Time: 1.05 us
Rise Time: 2.58 us
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 30 W
Vgs - Gate-Source Voltage: - 16 V, + 2.5 V
Typical Turn-On Delay Time: 2.97 us
Typical Turn-Off Delay Time: 1.55 us
Id - Continuous Drain Current: 4 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 2 S
Rds On - Drain-Source Resistance: 100 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
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