ROHM Semiconductor BSM180C12P2E202 SiC Power Module 1200V Vdss; 204A ID SiC Mod; SICSTD02
Manufacturer: ROHM Semiconductor Model: BSM180C12P2E202 - Contact
See more: Equipment Calibration-Inspection & Repair Service
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Width: 62 mm
Height: 15.4 mm
Length: 152 mm
Fall Time: 32 ns
Rise Time: 36 ns
Technology: SiC
Configuration: Single
Mounting Style: Screw Mount
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vf - Forward Voltage: 1.6 V at 180 A
Vr - Reverse Voltage: 1.2 kV
Pd - Power Dissipation: 1.36 kW
Vgs - Gate-Source Voltage: - 6 V, + 22 V
Typical Turn-On Delay Time: 49 ns
Typical Turn-Off Delay Time: 139 ns
Id - Continuous Drain Current: 204 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.6 V
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