Vishay Siliconix SISS54DN-T1-GE3 MOSFETs POWRPK N CHAN 30V
Manufacturer: Vishay Siliconix Model: SISS54DN-T1-GE3 - Contact
See more: Equipment Calibration-Inspection & Repair Service
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Fall Time: 7 ns
Rise Time: 7 ns
Technology: Si
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: TrenchFET Gen V Power MOSFET
Qg - Gate Charge: 47.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 65.7 W
Vgs - Gate-Source Voltage: - 12 V, + 16 V
Typical Turn-On Delay Time: 12 ns
Typical Turn-Off Delay Time: 28 ns
Id - Continuous Drain Current: 185.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 117 S
Rds On - Drain-Source Resistance: 1.06 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
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