WeEn Semiconductors PHE13009/DG,127 BJTs - Bipolar Transistors NPN POWER TRANSISTOR
Manufacturer: WeEn Semiconductors Model: PHE13009/DG,127 - Contact
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Technology: Si
Unit Weight: 6 g
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 80 W
DC Current Gain hFE Max: 40
Collector- Base Voltage VCBO: 700 V
Maximum DC Collector Current: 12 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 8
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 320 mV
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